SIA449DJ Datasheet, PDF (3/9 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
30
1
V_GS = 10 V thru 3V
24
0.8
SiA449DJ
Vishay Siliconix
18
V_GS = 2 V
12
0.6
T_C = 25 °C
0.4
6
0
0
0.5
1
1.5
2
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.040
0.2
0
0
3500
T_C = 125 °C
T_C = - 55 °C
0.45
0.9
1.35
1.8
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.034
0.028
V_GS = 2.5 V
2800
C_iss
2100
0.022
V_GS = 4.5 V
0.016
V_GS = 10 V
0.010
0
6
12
18
24
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 10.4 A
8
V_DS = 8 V
6
4
V_DS = 9.6 V
V_DS = 15 V
2
1400
700
0
0
C_rss
3
C_oss
6
9
12
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.7
1.48
1.26
V_GS = 10 V, 6 A
1.04
V_GS = 4.5 V, 5 A
0.82
0
0
10
20
30
40
50
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 62644
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S13-1993-Rev. B, 23-Sep-13
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000