SIA426DJ Datasheet, PDF (4/9 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

SiA426DJ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.040
10
T_J = 150 °C
1
T_J = 25 °C
0.034
0.028
0.022
0.016
I_D = 9.9 A
T_J = 125 °C
T_J = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Soure-Drain Diode Forward Voltage
1.4
0.010
0
5
10
15
20
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
25
1.2
I_D = 250 µA
20
1.0
15
10
0.8
5
0.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
0
0.001 0.01 0.1
1
10
100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
100 µs
1 ms
1
10 ms
100 ms
1s
0.1
10 s
DC
T_A = 25 °C
Single Pulse
BVDSS
Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 68630
S-81002-Rev. A, 05-May-08