SIA426DJ Datasheet, PDF (3/9 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
4
V_GS = 10 thru 3 V
16
3
12
2
8
V_GS = 2 V
1
4
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.04
0
0.0
1500
SiA426DJ
Vishay Siliconix
T_C = 125 °C
T_C = 25 °C
0.5
1.0
1.5
T_C = - 55 °C
2.0
2.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.03
V_GS = 2.5 V
0.02
V_GS = 4.5 V
V_GS = 10 V
0.01
0
4
8
12
16
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 9.9 A
8
V_DS = 10 V
6
V_DS = 16 V
4
2
1200
C_iss
900
600
300
C_oss
0 ^Crss
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
V_GS = 4.5 V, I_D = 9.4 A
1.5
1.2
V_GS = 10 V, I_D = 9.9 A
0.9
0
0
4
8
12
16
20
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 68630
S-81002-Rev. A, 05-May-08
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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