SIA414DJ_08 Datasheet, PDF (4/9 Pages) Vishay Siliconix – N-Channel 8-V (D-S) MOSFET

SiA414DJ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.040
0.032
I_D = 9.7 A
T_J = 150 °C
T_J = 25 °C
10
0.024
0.016
125 °C
0.008
25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.8
0.7
I_D = 250 µA
0.6
0.5
0.4
0.3
0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
10
5
0
0.001 0.01 0.1
1
10
100 1000
Time (s)
Single Pulse Power (Junction-to-Ambient)
100
Limited by R _DS(on)*
10
1
0.1
100 µs
1 ms
10 ms
100 ms
1s
10 s
DC
T_A = 25 °C
Single Pulse
0.01
0.1
1
10
V_DS - Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 73954
S-80435-Rev. B, 03-Mar-08