SIA414DJ_08 Datasheet, PDF (3/9 Pages) Vishay Siliconix – N-Channel 8-V (D-S) MOSFET

New Product
SiA414DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
10
V_GS = 5 thru 2 V
32
8
1.5 V
24
6
16
4
8
2
1V
0
0
0.0
0.4
0.8
1.2
1.6
2.0
0.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0.3
0.6
0.9
1.2
1.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.06
0.05
0.04
V_GS = 1.2 V
V_GS = 1.5 V
0.03
0.02
V_GS = 1.8 V
0.01
V_GS = 2.5 V
V_GS = 4.5 V
0
0
8
16
24
32
40
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
2500
2000
C_iss
1500
1000
C_oss
500
C_rss
0
0
2
4
6
8
V_DS - Drain-to-Source Voltage (V)
Capacitance
5
I_D = 10 A
4
3
2
V_DS = 4 V
V_DS = 6.4 V
1
0
0
3
6
9
12 15 18 21
Q_g - Total Gate Charge (nC)
Gate Charge
1.5
I_D = 9.7 A
1.4
1.3
V_GS = 1.8 V, 2.5 V, 4.5 V
1.2
1.1
V_GS = 1.5 V
1.0
0.9
0.8
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73954
S-80435-Rev. B, 03-Mar-08
www.vishay.com
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