SI9936BDY-T1-E3 Datasheet, PDF (4/9 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

Si9936BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
50
0.2
40
I_D = 250 µA
0.0
30
- 0.2
20
- 0.4
- 0.6
10
- 0.8
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
10 ^-3
10 ^-2
10 ^-1
1
10
Time (s)
Single Pulse Power
100 600
100
Limited by R_DS(on)*
I_DM Limited
10
P(t) = 0.0001
2
1
Duty Cycle = 0.5
1
I_D(on)
Limited
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
0.1
T_A = 25 °C
Single Pulse
P(t) = 1
P(t) = 10
DC
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
0.01
10^{- 4}
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4
Notes:
P_DM
Single Pulse
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 92 °C/W
3. T _JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^{- 3}
10^{- 2}
10^{- 1}
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Document Number: 72521
S09-0704-Rev. C, 27-Apr-09