SI9936BDY-T1-E3 Datasheet, PDF (3/9 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

Si9936BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.10
800
0.08
0.06
0.04
V_GS = 4.5 V
0.02
V_GS = 10 V
0.00
0
5 10 15 20 25 30 35 40
700
600
C_iss
500
400
300
200
C_oss
100
C_rss
0
0
5
10
15
20
25
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
V_DS = 15 V
I_D = 6 A
8
1.6
V_GS = 10 V
I_D = 6 A
1.4
6
1.2
4
1.0
2
0.8
0
0
2
4
6
8
10
Q_g - Total Gate Charge (nC)
Gate Charge
40
T_J = 150 °C
10
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.10
I_D = 6 A
0.08
0.06
0.04
T_J = 25 °C
0.02
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72521
S09-0704-Rev. C, 27-Apr-09
www.vishay.com
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