SI8806DB Datasheet, PDF (4/9 Pages) Vishay Siliconix – N-Channel 12 V (D-S) MOSFET

New Product
Si8806DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.15
10
T_J = 150 °C
1
T_J = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.12
I_D = 1 A
0.09
0.06
T_J = 125 °C
0.03
T_J = 25 °C
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
1.0
0.9
0.8
0.7
I_D = 250 μA
0.6
0.5
0.4
0.3
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
14
12
10
8
6
4
2
0
0.001 0.01
0.1
1
10
Time (s)
100 1000
Single Pulse Power (Junction-to-Ambient)
100
Limited by R_DS(on)*
10
1
100 μs
1 ms
10 ms
0.1
T_A = 25 °C
10 s, 1s, 100ms
DC
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 62652
4
S12-1957-Rev. C, 13-Aug-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000