SI8806DB Datasheet, PDF (3/9 Pages) Vishay Siliconix – N-Channel 12 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
10
V_GS = 5 V thru 2 V
V_GS = 1.5 V
16
8
Si8806DB
Vishay Siliconix
12
8
4
V_GS = 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.15
6
4
2
0
0.0
800
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0.4
0.8
1.2
1.6
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.12
0.09
V_GS = 1.8 V
0.06
0.03
V_GS = 2.5 V
V_GS = 4.5 V
0.00
0
4
8
12
16
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current
8
I_D = 1 A
6
V_DS = 6 V
4
V_DS = 3 V
V_DS = 9.6 V
600
C_iss
400
200
C_rss
C_oss
0
0
2
4
6
8
10
12
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.4
I_d = 1 A
1.2
V_gs = 4.5 V
V_gs = 2.5 V, 1.8 V
1.0
2
0.8
0
0
2
4
6
8
10
12
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 62652
For technical questions, contact: [e-mail]
www.vishay.com
S12-1957-Rev. C, 13-Aug-12
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000