SI8487DB Datasheet, PDF (4/11 Pages) Vishay Siliconix – Low-on resistance

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si8487DB
Vishay Siliconix
100
T_J = 150 °C
10
0.10
0.08
I_D = 2 A
0.06
T_J = 25 °C
0.04
T_J = 125 °C
1
0.02
T_J = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
1.1
1.0
0.9
0.8
I_D = 250 μA
0.7
0.6
0.5
0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
80
60
40
20
0
0.001 0.01 0.1
1
10
Time (s)
100
600
Single Pulse Power, Junction-to-Ambient
100 μs
1 ms
1
10 ms
0.1
T_A = 25 °C
BVDSS Limited
100 ms
1s
10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
S15-1692-Rev. E, 20-Jul-15
4
Document Number: 63483
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