SI8487DB Datasheet, PDF (3/11 Pages) Vishay Siliconix – Low-on resistance

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Si8487DB
Vishay Siliconix
20
V_GS = 5 V thru 2.5 V
V_GS = 2 V
15
10
5
V_GS = 1.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.05
10
8
6
T_C = 25 °C
4
2
0
0.0
3000
T_C = 125 °C
T_C = - 55 °C
0.5
1.0
1.5
2.0
2.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.04
0.03
0.02
V_GS = 2.5 V
V_GS = 4.5 V
V_GS = 10 V
0.01
0
5
10
15
20
25
I_D - Drain Current (A)
On-Resistance vs. Drain Current
2500
C_iss
2000
1500
1000
500
C_oss
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
I_D = 2 A
8
V_DS = 15 V
6
V_DS = 7.5 V
V_DS = 24 V
4
1.6
1.4
V_GS = 10 V, 4.5 V; I_D = 2 A
1.2
V_GS = 2.5 V; I_D = 1 A
1.0
2
0.8
0
0
10
20
30
40
50
60
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
S15-1692-Rev. E, 20-Jul-15
3
Document Number: 63483
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