SI7925DN Datasheet, PDF (4/6 Pages) Vishay Siliconix – Dual P-Channel 12-V (D-S) MOSFET

Si7925DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
30
0.3
25
0.2
20
I_D = 250 µA
0.1
15
0.0
10
- 0.1
5
- 0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_{DS (on)*}
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power
100 600
I_DM Limited
2
1
Duty Cycle = 0.5
10
1
I_D(on)
Limited
T_A = 25 °C
0.1
Single Pulse
BV_DSS Limited
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^-4
Notes:
P_DM
Single Pulse
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 75 °C/W
3. T _JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^-3
10^-2
10^-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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4
Document Number: 72343
S-81544-Rev. C, 07-Jul-08