SI7925DN Datasheet, PDF (1/6 Pages) Vishay Siliconix – Dual P-Channel 12-V (D-S) MOSFET

Dual P-Channel 12-V (D-S) MOSFET
Si7925DN
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.042 at V_GS = - 4.5 V
- 12
0.058 at V_GS = - 2.5 V
0.082 at V_GS = - 1.8 V
I_D (A)
- 6.5
- 5.5
- 1.2
PowerPAK 1212-8
FEATURES
• Halogen-free Option Available
• TrenchFET^® Power MOSFET: 1.8 V Rated
APPLICATIONS
• Load Switch
• PA Switch
• Battery Switch
• Bi-Directional Switch
RoHS
COMPLIANT
3.30 mm
S1
1
G1
2
3.30 mm
S2
3
G2
4
D1
8
D1
7
D2
6
D2
5
Bottom View
Ordering Information: Si7925DN-T1-E3 (Lead (Pb)-free)
Si7925DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
S₁
G₁
S₂
G₂
D₁
P-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 12
V
V_GS
±8
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 85 °C
I_D
- 6.5
- 4.7
- 4.8
- 3.4
A
I_DM
- 20
Continuous Source Current (Diode Conduction)^a
I_S
- 2.1
- 1.1
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 85 °C
P_D
2.5
1.3
1.5
0.69
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{b, c}
T_J, T_stg
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case
t ≤ 10 s
Steady State
Steady State
Symbol
R_thJA
R_thJC
Typical
40
75
5.6
Maximum
50
94
7
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72343
S-81544-Rev. C, 07-Jul-08
www.vishay.com
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