SI7922DN-T1 Datasheet, PDF (4/12 Pages) Vishay Siliconix – Dual N-Channel 100-V (D-S) MOSFET

Si7922DN
Vishay Siliconix
TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
0.6
50
0.4
40
0.2
I_D = 250 µA
0.0
30
- 0.2
- 0.4
20
- 0.6
10
- 0.8
- 1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001 0.01
0.1
1
10
100 600
Time (s)
Single Pulse Power, Junction-to-Ambient
100
10
Limited by R _DS(on)*
I_DM
Limited
P(t) = 0.0001
2
1
Duty Cycle = 0.5
1
I_D(on)
Limited
P(t) = 0.001
0.1
T_A = 25 °C
Single Pulse
0.01
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
BV_DSS Limited
Safe Operating Area, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^-4
Notes:
P_DM
Single Pulse
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 77 °C/W
3. T _JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^-3
10^-2
10^-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
4
Document Number: 72031
S-81544-Rev. E, 07-Jul-08