SI7922DN-T1 Datasheet, PDF (3/12 Pages) Vishay Siliconix – Dual N-Channel 100-V (D-S) MOSFET

Si7922DN
Vishay Siliconix
TYPICAL CHARACTERISTICS T_A = 25 °C, unless otherwise noted
0.5
320
0.4
0.3
0.2
0.1
0.0
0
V_GS = 6 V
V_GS = 10 V
2
4
6
8
10
280
240
200
160
120
80
40
0 ^Crss
0
20
C_iss
C_oss
40
60
80
100
I_D - Drain Current (A)
On-Resistance vs. Drain Current
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
V_DS = 50 V
I_D = 2.5 A
8
6
4
2
0
0
1
2
3
4
5
6
Q_g - Total Gate Charge (nC)
Gate Charge
2.2
2.0
V_GS = 10 V
I_D = 2.5 A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
10
0.5
0.4
T_J = 150 °C
T_J = 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.3
I_D = 2.5 A
0.2
0.1
0.0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72031
S-81544-Rev. E, 07-Jul-08
www.vishay.com
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