SI7905DN-T1-GE3 Datasheet, PDF (4/13 Pages) Vishay Siliconix – Dual P-Channel 40 V (D-S) MOSFET

Si7905DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.20
T_J = 150 °C
10
0.15
T_J = 25 °C
1
0.10
0.1
0.05
0.01
I_D = 5 A
T_A = 125 °C
T_A = 25 °C
0.001
0.0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.2
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
2.0
40
1.8
I_D = 250 µA
30
1.6
20
1.4
10
1.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
0
0.001 0.01 0.1
1
10
100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
100 µs
1 ms
1
10 ms
100 ms
0.1
1s
10 s
T_A = 25 °C
DC
Single Pulse
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
Document Number: 69920
4
S11-2187-Rev. C, 07-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000