SI7905DN-T1-GE3 Datasheet, PDF (3/13 Pages) Vishay Siliconix – Dual P-Channel 40 V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
3.0
V_GS = 10 thru 5 V
V_GS = 4 V
2.4
15
1.8
10
1.2
5
0
0.0
0.12
V_GS = 3 V
V_GS = 2 V
0.6
1.2
1.8
2.4
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.6
0.0
0
1500
Si7905DN
Vishay Siliconix
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
1
2
3
4
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.09
0.06
0.03
V_GS = 4.5 V
V_GS = 10 V
0.00
0
5
10
15
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 5 A
8
6
V_DS = 20 V
V_DS = 32 V
4
2
1200
C_iss
900
600
300
C_oss
C_rss
0
0
8
16
24
32
40
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
V_GS = 10 V, I_D = 5 A
1.5
1.2
V_GS = 4.5 V, I_D = 4 A
0.9
0
0
4
8
12
16
20
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69920
www.vishay.com
S11-2187-Rev. C, 07-Nov-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000