SI7880ADP Datasheet, PDF (4/13 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si7880ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.015
T_J = 150 °C
10
0.012
0.009
1
0.006
0.1
T_J = 25 °C
0.003
T_J = 25 °C
I_D = 20 A
T_J = 125 °C
0.01
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.2
0.0
- 0.2
- 0.4
I_D = 5 mA
- 0.6
- 0.8
I_D = 250 µA
- 1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by
R_DS(on)*
10
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
160
120
80
40
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
1
0.1
T_A = 25 °C
Single Pulse
100 ms
1s
10 s
DC
0.01
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 73414
S-80438-Rev. B, 03-Mar-08