SI7880ADP Datasheet, PDF (3/13 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si7880ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
1.2
60
50
40
30
20
10
0
0.0
V_GS = 10 thru 3 V
3V
0.3
0.6
0.9
1.2
1.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
1.0
0.8
0.6
0.4
25 °C
0.2
0.0
0.0
T_C = 125 °C
- 55 °C
0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.0040
0.0036
6800
C_iss
5440
0.0032
V_GS = 2.5 V
4080
0.0028
0.0024
V_GS = 4.5 V
0.0020
0
10
20
30
40
50
60
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
8
V_DS = 10 V
6
V_DS = 15 V
4
V_DS = 20 V
2
0
0
17
34
51
68
85
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 73414
S-80438-Rev. B, 03-Mar-08
2720
1360
C_rss
C_oss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
1.6
I_D = 20 A
V_GS = 10 V
1.4
V_GS = 4.5 V
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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