SI7840BDP-T1-E3 Datasheet, PDF (4/8 Pages) Vishay Siliconix – N-Channel 30-V (D-S) Fast Switching MOSFET

Si7840BDP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
50
0.2
40
- 0.0
I_D = 250 μA
- 0.2
30
- 0.4
20
- 0.6
10
- 0.8
- 1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (˚C)
Threshold Voltage
0
0.001 0.01
0.1
1
10
Time (s)
Single Pulse Power
100 600
100
Limited by R_DS(on)*
10
1
0.1
T_C = 25 °C
Single Pulse
1 ms
10 ms
100 ms
1s
10 s
dc
2
1
Duty Cycle = 0.5
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Case
0.2
0.1
0.1
0.05
0.02
0.01
10^-4
Single Pulse
10^-3
Notes:
P_DM
t₁
1.
2.
t₂
Duty Cycle, D
Per Unit Base
=
=
t₁
t₂
R _thJA
=
58°C/W
- 3. T _JM T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^-2
10^-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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4
Document Number: 73218
S09-0272-Rev. C, 16-Feb-09