SI7840BDP-T1-E3 Datasheet, PDF (3/8 Pages) Vishay Siliconix – N-Channel 30-V (D-S) Fast Switching MOSFET

Si7840BDP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.012
2500
0.011
0.010
0.009
0.008
0.007
0.006
0.005
V_GS = 4.5 V
V_GS = 10 V
C_iss
2000
1500
1000
500
C_rss
C_oss
0.004
0
5 10 15 20 25 30 35 40
I_D - Drain Current (A)
On-Resistance vs. Drain Current
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
6
5
V_DS = 15 V
I_D = 16.5 A
4
1.8
1.6
V_GS = 10 V
I_D = 16.5 A
1.4
3
1.2
2
1.0
1
0
0 2 4 6 8 10 12 14 16
Q_g - Total Gate Charge (nC)
Gate Charge
40
0.8
0 .6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.05
T_J = 150˚C
10
0.04
0.03
I_D = 16.5 A
0.02
T_J = 25˚C
0.01
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73218
S09-0272-Rev. C, 16-Feb-09
www.vishay.com
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