SI7483DP Datasheet, PDF (4/6 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si7483DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.8
200
0.6
160
0.4
I_D = 250 mA
120
0.2
80
0.0
--0.2
40
Single Pulse Power
--0.4
--50 --25
0 25 50 75 100 125 150
T_J -- Temperature (_C)
0
0.001
0.01
0.1
1
10
Time (sec)
100
Limited by
r_DS(on)
10
Safe Operating Area
1
0.1
T_C = 25_C
Single Pulse
1 ms
10 ms
100 ms
1s
10 s
dc
2
1
Duty Cycle = 0.5
0.01
0.1
1
10
100
V_DS -- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^--4
Single Pulse
10^--3
10^--2
10^--1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
1.
2.
t₂
Duty Cycle, D
Per Unit Base
=
=
t₁
R_th^t_J2A
=
50_C/W
3. T_JM -- T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 71940
S-21441—Rev. A, 19-Aug-02