SI7483DP Datasheet, PDF (2/6 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si7483DP
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = --250 mA
V_DS = 0 V, V_GS = 20 V
V_DS = --24 V, V_GS = 0 V
V_DS = --24 V, V_GS = 0 V, T_J = 70_C
V_DS = --5 V, V_GS = --10 V
V_GS = --10 V, I_D = --24 A
V_GS = --4.5 V, I_D = --17 A
V_DS = --15 V, I_D = --24 A
I_S = --2.9 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Resistance
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
R_g
t_rr
Notes
a. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = --15 V, V_GS = --10 V, I_D = --24 A
V_DD = --15 V, R_L = 15 Ω
I_D ≅ --1 A, V_GEN = --10 V, R_G = 6 Ω
I_F = --2.9 A, di/dt = 100 A/ms
Min
Typ
Max Unit
--1.0
--3.0
V
100
nA
--1
--10
mA
--30
A
0.0041
0.005
0.0077
0.0095
Ω
70
S
--0.75
--1.1
V
120
180
18.3
nC
33.2
25
40
40
65
220
350
ns
125
200
4
Ω
87
135
ns
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
60
V_GS = 10 thru 4 V
50
40
30
20
10
0
0
3V
1
2
3
4
5
V_DS -- Drain-to-Source Voltage (V)
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2
Transfer Characteristics
60
50
40
30
20
T_C = 125_C
10
0
0.0
25_C
--55_C
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS -- Gate-to-Source Voltage (V)
Document Number: 71940
S-21441—Rev. A, 19-Aug-02