SI7483ADP-T1-E3 Datasheet, PDF (4/8 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si7483ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.8
200
0.6
160
0.4
I_D = 250 µA
120
0.2
80
0.0
- 0.2
40
- 0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power
100
Limited by
R_DS(on)*
10
1
0.1
T_C = 25 °C
Single Pulse
1 ms
10 ms
100 ms
1s
10 s
DC
2
1
Duty Cycle = 0.5
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_DS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Case
0.2
0.1
0.1
0.05
0.02
0.01
10- ⁴
10- ³
Notes:
P _DM
Single Pulse
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 50 °C/W
3. T _JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10- ²
10- ¹
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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4
Document Number: 73025
S09-0270-Rev. C, 16-Feb-09