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SI7483ADP-T1-E3 Datasheet, PDF (1/8 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET
P-Channel 30-V (D-S) MOSFET
Si7483ADP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0057 at VGS = - 10 V
30
0.0095 at VGS = - 4.5 V
ID (A)
- 24
- 17
PowerPAK SO-8
6.15 mm
D
8
D
7
D
6
D
5
S
1
S
5.15 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7483ADP-T1-E3 (Lead (Pb)-free)
Si7483ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFETS
• New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
• 100 % Rg tested
APPLICATIONS
• Battery and Load Switching
- Notebook Computers
- Notebook Battery Packs
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
- 30
V
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Current
TA = 25 °C
TA = 70 °C
ID
- 24
- 14
- 19
- 11
A
IDM
- 60
Continuous Source Current (Diode Conduction)a
IS
- 4.5
- 1.6
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
5.4
1.9
3.4
1.2
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b,c
TJ, Tstg
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
t ≤ 10 s
Steady State
RthJA
18
50
23
65
°C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
1.0
1.5
Notes
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73025
S09-0270-Rev. C, 16-Feb-09
www.vishay.com
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