SI7390DP Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) Fast Switching WFET

Si7390DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C unless noted
0.6
100
0.4
80
0.2
I_D = 250 A
- 0.0
60
- 0.2
40
- 0.4
20
- 0.6
- 0.8
-50 -25
0 25 50 75 100 125 150
T_J - Temperature (˚C)
Threshold Voltage
0
0.01
0.1
1
10
100 600
Time (sec)
Single Pulse Power
2
1
Duty Cycle = 0.5
100
Limited by r_DS(on)
10
1
0.1
T_C = 25˚C
Single Pulse
10 ms
100 ms
1s
10 s
dc
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
Safe Operating Area, Junction-to-Case
0.2
0.1
0.1
0.05
0.02
0.01
10 ^{- 4}
Single Pulse
10 ^{- 3}
Notes:
P_DM
t₁
1.
2.
t₂
Duty Cycle, D
Per Unit Base
=
=
t₁
t₂
R_thJA
=
125˚C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10 ^{- 2}
10 ^{- 1}
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
600
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4
Document Number: 72214
S-51773-Rev. C, 31-Oct-05