SI7390DP Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) Fast Switching WFET

New Product
TYPICAL CHARACTERISTICS 25 °C unless noted
0.030
1800
0.024
0.018
0.012
0.006
V_GS = 4.5 V
V_GS = 10 V
1500
1200
900
600
300
C_rss
Si7390DP
Vishay Siliconix
C_iss
C_oss
0.000
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
6
V_DS = 15 V
5
I_D = 12.5 A
1.8
V_GS = 10 V
1.6
I_D = 12.5 A
4
1.4
3
1.2
2
1.0
1
0.8
0
0
3
6
9
12
15
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
-50 -25 0
25 50 75 100 125 150
T_J - Junction Temperature (˚C)
On-Resistance vs. Junction Temperature
50
0.040
T_J = 150˚C
10
0.032
0.024
I_D = 12.5 A
0.016
1
T_J = 25˚C
0.008
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72214
S-51773-Rev. C, 31-Oct-05
www.vishay.com
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