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SI7386DP Datasheet, PDF (4/8 Pages) Vishay Siliconix – N-Channel Reduced Qg, Fast Switching MOSFET
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Si7386DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
50
0.2
ID = 250 µA
40
0.0
30
- 0.2
- 0.4
20
- 0.6
10
- 0.8
- 1.0
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.01
0.1
1
10
100
600
Time (s)
Single Pulse Power
100
Limited by RDS(on)*
IDM Limited
2
1
Duty Cycle = 0.5
10
ID(on)
Limited
1
10 ms
100 ms
1s
0.1
TC = 25 °C
Single Pulse
10 s
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 67 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
4
Document Number: 73108
S-80439-Rev. C, 03-Mar-08
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