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SI7386DP Datasheet, PDF (1/8 Pages) Vishay Siliconix – N-Channel Reduced Qg, Fast Switching MOSFET
Si7386DP
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30
0.007 at VGS = 10 V
0.0095 at VGS = 4.5 V
ID (A)
19
17
Qg (Typ.)
11.5
PowerPAK SO-8
6.15 mm
D
8
D
7
D
6
D
5
S
1
S
5.15 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7386DP-T1-E3 (Lead (Pb)-free)
Si7386DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free available
• TrenchFET® Gen II Power MOSFET
• PWM Optimized for High Efficiency
• New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
• 100 % Rg Tested
APPLICATIONS
• DC/DC Conversion for PC
D
RoHS
COMPLIANT
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
30
V
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
19
16
12
9
Pulsed Drain Current
IDM
± 50
A
Continuous Source Current (Diode Conduction)a
IS
4.1
1.5
Avalanche Current
Single Pulse Avalanche Energy
IAS
25
L = 0.1 mH
EAS
32
mJ
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
5
3.2
1.8
1.1
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
TJ, Tstg
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient (MOSFET)a
t ≤ 10 s
Steady State
RthJA
21
56
Maximum Junction-to-Case (Drain)
Steady State
RthJC
2.4
25
70
°C/W
3.0
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73108
S-80439-Rev. C, 03-Mar-08
www.vishay.com
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