SI7370DP Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET

Si7370DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
1.0
Single Pulse Power, Juncion-To-Ambient
100
0.6
80
I_D = 250 mA
0.2
60
−0.2
40
−0.6
20
−1.0
−1.4
−50 −25
0 25 50 75 100 125 150 175
T_J − Temperature (_C)
0
0.001
0.01
0.1
1
10
Time (sec)
Safe Operating Area
100
Limited by
r_DS(on)
10
1
0.1
T_C = 25_C
Single Pulse
0.01
0.01
0.1
1
10
V_DS − Drain-to-Source Voltage (V)
10 ms
100 ms
1 ms
10 ms
100 ms
1s
10 s
100 s, dc
100
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^−4
Single Pulse
10^−3
10^−2
10^−1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 58_C/W
3. T_JM − T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
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4
Document Number: 71874
S-41262—Rev. D, 05-Jul-04