SI7370DP Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET

Si7370DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.020
On-Resistance vs. Drain Current
4000
Capacitance
0.015
0.010
V_GS = 6 V
V_GS = 10 V
3500
3000
C_iss
2500
2000
1500
0.005
1000
500
C_rss
C_oss
0.000
0
10
20
30
40
50
0
0
15
30
45
60
I_D − Drain Current (A)
Gate Charge
10
V_DS = 30 V
I_D = 5 A
8
6
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.1
V_GS = 10 V
1.8
I_D = 5 A
1.5
1.2
4
0.9
0.6
2
0.3
0
0
10
20
30
40
50
Q_g − Total Gate Charge (nC)
0.0
−50 −25
0 25 50 75 100 125 150 175
T_J − Junction Temperature (_C)
Source-Drain Diode Forward Voltage
100
On-Resistance vs. Gate-to-Source Voltage
0.10
T_J = 150_C
10
T_J = 25_C
0.08
I_D = 5 A
0.06
0.04
0.02
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
Document Number: 71874
S-41262—Rev. D, 05-Jul-04
0.00
0
2
4
6
8
10
V_GS − Gate-to-Source Voltage (V)
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