SI7342DP Datasheet, PDF (4/6 Pages) Vishay Siliconix – N-Channel 30 V (D-S) Fast Switching MOSFET

Si7342DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.4
100
0.2
80
I_D = 250 µA
0.0
60
- 0.2
40
- 0.4
20
- 0.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.01
0.1
1
10
100 600
Time (s)
Single Pulse Power
100
Limited by R_DS(on)*
10
1
0.1
T_C = 25 °C
Single Pulse
10 ms
100 ms
1s
10 s
DC
2
1
Duty Cycle = 0.5
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Case
0.2
0.1
0.1
0.05
0.02
0.01
10- ⁴
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4
Notes:
P_DM
Single Pulse
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 125 °C/W
3. T _JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10- ³
10- ²
10- ¹
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
600
Document Number: 72751
S11-0212-Rev. D, 14-Feb-11