SI7342DP Datasheet, PDF (3/6 Pages) Vishay Siliconix – N-Channel 30 V (D-S) Fast Switching MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.015
2200
0.012
1760
Si7342DP
Vishay Siliconix
C_iss
0.009
V_GS = 4.5 V
1320
0.006
0.003
V_GS = 10 V
0.000
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current
6
V_DS = 15 V
5
I_D = 15 A
4
3
2
1
0
0
3
6
9
12
15
18
Q_g - Total Gate Charge (nC)
Gate Charge
60
880
440
C_rss
C_oss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
V_GS = 10 V
1.6
I_D = 15 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.040
T_J = 150 °C
10
0.032
0.024
I_D = 15 A
0.016
1
T_J = 25 °C
0.008
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72751
S11-0212-Rev. D, 14-Feb-11
www.vishay.com
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