SI7328DN Datasheet, PDF (4/12 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si7328DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
0.05
0.04
T_J = 150 °C
10
0.03
T_J = 25 °C
0.02
0.01
I_D = 18.9 A
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.2
I_D = 250 µA
0.0
- 0.2
- 0.4
- 0.6
0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
- 0.8
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.01
0.1
1
10
100
600
Time (s)
Single Pulse Power, Junction-to-Ambient
100 _{Limited by RDS(on)*}
I_DM Limited
P(t) = 0.0001
10
I_D(on)
1 ^Limited
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
T_C = 25 °C
0.1
Single Pulse
P(t) = 1
P(t) = 10
DC
BV_DSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 73960
S-81005-Rev. B, 05-May-08