SI7328DN Datasheet, PDF (2/12 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si7328DN
Vishay Siliconix
New Product
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, b}
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 81 °C/W.
Symbol
R_thJA
R_thJC
Typical
24
65
1.9
Maximum
33
81
2.4
Unit
°C/W
MOSFET SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 µA
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = ± 12 V
Zero Gate Voltage Drain Current
I_DSS
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 55 °C
On-State Drain Current^a
I_D(on)
V_DS ≥ 5 V, V_GS = 10 V
Drain-Source On-State Resistance^a
R_DS(on)
V_GS = 10 V, I_D = 18.9 A
V_GS = 4.5 V, I_D = 17.65 A
Forward Transconductance^a
g_fs
V_DS = 15 V, I_D = 18.9 A
Diode Forward Voltage
V_SD
I_S = 3.2 A, V_GS = 0 V
Dynamic^b
Input Capacitance
C_iss
Output Capacitance
C_oss
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
C_rss
Total Gate Charge
Q_g
Gate-Source Charge
Q_gs
V_DS = 15 V, V_GS = 4.5 V, I_D = 18.9 A
Gate-Drain Charge
Q_gd
Gate Resistance
R_g
f = 1 MHz
Turn-On Delay Time
t_d(on)
Rise Time
Turn-Off Delay Time
t_r
t_d(off)
V_DD = 15 V, R_L = 0.86 Ω
I_D ≅ 17.3 A, V_GEN = 10 V, R_g = 1 Ω
Fall Time
t_f
Body Diode Reverse Recovery Time
t_rr
Body Diode Reverse Recovery Charge
Q_rr
I_F = 3.2 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
Typ.
Max.
Unit
0.6
1.5
V
± 100
nA
1
µA
5
40
A
0.0055 0.0066
Ω
0.0063 0.0076
97
S
0.7
1.2
V
2610
300
pF
140
21
31.5
7.5
nC
2.5
0.5
1.2
1.8
Ω
10
15
10
15
35
52.5
ns
8
12
30
60
18
nC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73960
S-81005-Rev. B, 05-May-08