SI7317DN Datasheet, PDF (4/13 Pages) Vishay Siliconix – P-Channel 150 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
2.800
T_J = 150 °C
T_J = 25 °C
1
2.100
1.400
0.700
Si7317DN
Vishay Siliconix
I_D = 0.5 A
T_J = 125 °C
T_J = 25 °C
0.1
0.0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.000
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
3.4
50
I_D = 250 μA
40
3.1
30
2.8
20
2.5
10
2.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
10
Time (s)
100 1000
Single Pulse Power, Junction-to-Ambient
10
I limited
DM
1
Limited by R_DS(on)*
0.1
0.01
1 ms
10 ms
100 ms
1s
10 s
DC
0.001
T_A = 25 °C
Single Pulse
BVDSS Limited
0.1
1
10
100
1000
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
S15-2640-Rev. B, 16-Nov-15
4
Document Number: 62892
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