SI7317DN Datasheet, PDF (3/13 Pages) Vishay Siliconix – P-Channel 150 V (D-S) MOSFET

www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
V_GS = 5 V
2
V_GS = 10 V thru 6 V
1.5
1.5
Si7317DN
Vishay Siliconix
T_C = 25 °C
1
1
0.5
0
0
1.3
V_GS = 4 V
0.6
1.2
1.8
2.4
3
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.5
0
0
360
T_C = 125 °C
T_C = -55 °C
1.5
3
4.5
6
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1.15
270
V_GS = 6 V
C_iss
1
0.85
V_GS = 10 V
0.7
0
0.5
1
1.5
2
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
180
90
C_oss
0 ^Crss
0
30
60
90
120
150
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
I_D = 1.1 A
V_DS = 38 V
8
V_DS = 75 V
6
4
V_DS = 120 V
2
2.2
1.75
1.3
0.85
V_GS = 10 V, 0.5 A
V_GS = 6 V, 0.5 A
0
0
2
4
6
8
Q_g - Total Gate Charge (nC)
Gate Charge
0.4
-50 -25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
S15-2640-Rev. B, 16-Nov-15
3
Document Number: 62892
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000