SI7220DN Datasheet, PDF (4/5 Pages) Vishay Siliconix – Dual N-Channel 60-V (D-S) MOSFET

Si7220DN
Vishay Siliconix
references fixed
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
0.4
0.2
−0.0
I_D = 250 mA
−0.2
−0.4
−0.6
−0.8
−1.0
−50 −25
0 25 50 75 100 125 150
T_J − Temperature (_C)
Single Pulse Power
50
40
30
20
10
0
0.001 0.01
0.1
1
10
Time (sec)
Safe Operating Area, Junction-To-Ambient
100
I_DM
*r_DS(on) Limited
Limited
10
P(t) = 0.0001
100 600
1
I_D(on)
Limited
0.1
T_A = 25_C
Single Pulse
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
0.01
BV_DSS Limited
dc
0.1
1
10
100
V_DS − Drain-to-Source Voltage (V)
*V_GS u minimum V_GS at which r_DS(on) is specified
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^−4
Single Pulse
10^−3
10^−2
10^−1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 77_C/W
3. T_JM − T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 73117
S-51128—Rev. B, 13-Jun-05