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SI7220DN Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual N-Channel 60-V (D-S) MOSFET
Si7220DN
Vishay Siliconix
Dual N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
60
rDS(on) (W)
0.060 @ VGS = 10 V
0.075 @ VGS = 4.5 V
ID (A)
4.8
4.3
Qg (Typ)
13
PowerPAK 1212-8
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance
PowerPAKr Package, 1/3 the Space
of An SO-8 While Thermally Comparable
APPLICATIONS
D Synchronous Rectification
D Primary Side Switch
RoHS
COMPLIANT
D1
D2
3.30 mm
S1
1
G1
3.30 mm
2
S2
3
G2
4
G1
G2
D1
8
D1
7
D2
6
D2
5
Ordering Information: Si7220DN-T1—E3 (Lead (Pb)-Free)
S1
S2
Bottom View
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b,c
TA = 25_C
TA = 70_C
L = 0.1 mH
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IAS
EAS
IS
PD
TJ, Tstg
60
"20
4.8
3.4
3.8
2.7
20
11
6.1
2.2
1.1
2.6
1.3
1.4
0.69
−55 to 150
260
Unit
V
A
mJ
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
t v 10 sec
38
Steady State
RthJA
77
Steady State
RthJC
4.3
48
94
_C/W
5.4
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73117
S-51128—Rev. B, 13-Jun-05
www.vishay.com
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