SI7196DP Datasheet, PDF (4/13 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si7196DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.05
0.04
10
0.03
I_D = 12 A
1
T_J = 150 °C
T_J = 25 °C
0.02
0.01
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.00
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
150
0.2
120
0.0
I_D = 250 µA
90
- 0.2
60
- 0.4
- 0.6
30
- 0.8
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by R_DS(on)*
10
1 ms
10 ms
1
100 ms
1s
10 s
0.1
DC
0.01
0.01
T_A = 25 °C
Single Pulse
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 70336
S09-0273-Rev. C, 16-Feb-09