SI7196DP Datasheet, PDF (3/13 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
40
V_GS = 10 V thru 5 V
40
32
Si7196DP
Vishay Siliconix
30
V_GS = 4 V
20
10
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.015
0.013
0.011
V_GS = 4.5 V
24
16
8
0
0
2000
1600
1200
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
C_iss
0.009
0.007
V_GS = 10 V
0.005
0
6
12
18
24
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 12 A
8
V_DS = 15 V
6
4
800
C_oss
400
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.7
I_D = 12 A
1.5
1.3
1.1
V_GS = 10 V
V_GS = 4.5 V
2
0.9
0
0
5
10
15
20
25
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 70336
S09-0273-Rev. C, 16-Feb-09
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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