SI7178DP-T1-GE3 Datasheet, PDF (4/13 Pages) Vishay Siliconix – N-Channel 100-V (D-S) MOSFET

Si7178DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.10
T_J = 150 °C
10
0.08
T_J = 25 °C
1
0.06
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
0.04
0.02
T_A = 125 °C
0.00
T_A = 25 °C
5
6
7
8
9
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
0.2
160
- 0.2
120
I_D = 5 mA
- 0.6
80
I_D = 250 µA
- 1.0
40
- 1.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
1
100 ms
0.1
1s
10 s
0.01
0.01
T_A = 25 °C
Single Pulse
0.1
1
DC
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 69951
S-80678-Rev. A, 31-Mar-08