SI7178DP-T1-GE3 Datasheet, PDF (2/13 Pages) Vishay Siliconix – N-Channel 100-V (D-S) MOSFET

Si7178DP
Vishay Siliconix
New Product
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
V_DS
ΔV_DS/T_J
ΔV_GS(th)/T_J
V_GS(th)
I_GSS
I_DSS
I_D(on)
V_GS = 0 V, I_D = 250 µA
I_D = 250 µA
V_DS = V_GS , I_D = 250 µA
V_DS = 0 V, V_GS = ± 20 V
V_DS = 100 V, V_GS = 0 V
V_DS = 100 V, V_GS = 0 V, T_J = 55 °C
V_DS ≥ 10 V, V_GS = 10 V
Drain-Source On-State Resistance^a
Forward Transconductance^a
R_DS(on)
g_fs
V_GS = 10 V, I_D = 10 A
V_DS = 15 V, I_D = 10 A
Dynamic^b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
V_DS = 50 V, V_GS = 0 V, f = 1 MHz
V_DS = 50 V, V_GS = 10 V, I_D = 10 A
f = 1 MHz
V_DD = 50 V, R_L = 10 Ω
I_D ≅ 5 A, V_GEN = 10 V, R_g = 1 Ω
V_DD = 50 V, R_L = 10 Ω
I_D ≅ 5 A, V_GEN = 8 V, R_g = 1 Ω
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I_S
Pulse Diode Forward Current^a
I_SM
T_C = 25 °C
Body Diode Voltage
V_SD
I_S = 4 A
Body Diode Reverse Recovery Time
t_rr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Q_rr
t_a
I_F = 10 A, di/dt = 100 A/µs, T_J = 25 °C
Reverse Recovery Rise Time
t_b
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Min.
Typ.
Max.
Unit
100
V
130
mV/°C
- 10
2.5
4.5
V
± 100
nA
1
µA
10
40
A
0.0114 0.014
Ω
28
S
2870
225
pF
91
47.5
72
13.2
nC
12.7
0.3
1.15
2.3
Ω
18
35
10
20
27
50
10
20
ns
21
40
10
20
27
50
11
20
60
A
80
0.76
1.2
V
64
100
ns
200
300
nC
51
ns
13
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 69951
S-80678-Rev. A, 31-Mar-08