SI7170DP Datasheet, PDF (4/9 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si7170DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
10
T_J = 150 °C
1
T_J = 25 °C
0.015
I_D = 15 A
0.012
0.009
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
0.006
T_J = 125 °C
0.003
T_J = 25 °C
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
0.3
160
0.0
120
- 0.3
I_D = 5 mA
80
- 0.6
- 0.9
- 50 - 25
I_D = 250 µA
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
40
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by R_DS(on)*
10
1 ms
10 ms
1
100 ms
1s
10 s
0.1
DC
T_A = 25 °C
Single Pulse
BVDSS
0.01
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 69981
4
S11-1650-Rev. C, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000