SI7170DP Datasheet, PDF (3/9 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
70
5
V_GS = 10 V thru 4 V
56
4
Si7170DP
Vishay Siliconix
42
28
14
0
0
0.0040
0.0036
V_GS = 3 V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
V_GS = 4.5 V
3
2
1
0
0
5500
4400
T_C = 125 °C
T_C = 25 °C
T_C = - 55 °C
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
C_iss
0.0032
3300
0.0028
0.0024
V_GS = 10 V
0.0020
0
14
28
42
56
70
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 20 A
V_DS = 10 V
8
V_DS = 15 V
V_DS = 20 V
6
4
2200
1100
C_oss
0 ^Crss
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.7
I_D = 15 A
1.5
1.3
1.1
V_GS = 10 V
V_GS = 4.5 V
2
0.9
0
0
14
28
42
56
70
Q_g - Total Gate Charge (nC)
Gate Charge
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69981
www.vishay.com
S11-1650-Rev. C, 15-Aug-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000