SI7164DP Datasheet, PDF (4/13 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET

Si7164DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.05
10
0.04
T_J = 150 °C
1
T_J = 25 °C
0.03
I_D = 10 A
0.1
0.02
0.01
T_J = 125 °C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
0.3
0.0
- 0.3
- 0.6
I_D = 5 mA
- 0.9
- 1.2
I_D = 250 µA
T_J = 25 °C
0.00
4
5
6
7
8
9
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
160
120
80
40
- 1.5
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by R_DS(on)*
10
1 ms
10 ms
1
100 ms
1s
0.1
10 s
T_A = 25 °C
Single Pulse
0.01
0.01
0.1
1
BVDSS
Limited
10
DC
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 68738
S-81581-Rev. A, 07-Jul-08