SI7164DP Datasheet, PDF (3/13 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80
10
V_GS = 10 thru 6 V
64
8
48
6
T_C = 25 °C
Si7164DP
Vishay Siliconix
32
V_GS = 5 V
16
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.0065
0.0061
0.0057
V_GS = 8 V
4
2
T_C = 125 °C
T_C = - 55 °C
0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
3650
C_iss
2920
2190
0.0053
0.0049
V_GS = 10 V
0.0045
0
14
28
42
56
70
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 10 A
8
V_DS = 20 V
V_DS = 30 V
6
V_DS = 40 V
4
1460
730
C_oss
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.0
I_D = 10 A
1.7
V_GS = 10 V
1.4
V_GS = 8 V
1.1
2
0.8
0
0.0
10.4
20.8
31.2
41.6
52.0
Q_g - Total Gate Charge (nC)
Gate Charge
0.5
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68738
S-81581-Rev. A, 07-Jul-08
www.vishay.com
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