SI7159DN Datasheet, PDF (4/7 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si7159DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.030
10
T_J = 150 °C
1
T_J = 25 °C
0.024
0.018
I_D = - 15 A
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
0.012
T_J = 125 °C
0.006
T_J = 25 °C
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
0.3
160
0.0
- 0.3
- 0.6
120
I_D = 5 mA
80
I_D = 250 µA
40
- 0.9
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
1
100 ms
0.1
T_A = 25 °C
Single Pulse
1s
10 s
DC
BVDSS Limited
0.01
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
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4
Document Number: 68872
S-82122-Rev. A, 08-Sep-08