SI7159DN Datasheet, PDF (3/7 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
10
V_GS = 10 thru 4 V
48
8
Si7159DP
Vishay Siliconix
36
6
24
12
0
0.0
0.010
V_GS = 3 V
V_GS = 1 V, 2 V
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
4
T_C = 25 °C
2
T_C = 125 °C
T_C = - 55 °C
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
7500
0.009
0.008
V_GS = 4.5 V
6000
C_iss
4500
0.007
0.006
V_GS = 10 V
0.005
0
10
20
30
40
50
60
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 10 A
8
V_DS = 15 V
6
V_DS = 10 V
V_DS = 20 V
4
3000
C_oss
1500
0
0
C_rss
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
I_D = - 15 A
1.4
V_GS = - 10 V
1.2
V_GS = - 4.5 V
1.0
2
0.8
0
0
25
50
75
100
125
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 68872
S-82122-Rev. A, 08-Sep-08
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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