SI7143DP Datasheet, PDF (4/7 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

New Product
Si7143DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.05
0.04
10
0.03
T_J = 150 °C
1
T_J = 25 °C
0.1
0.0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
- 1.3
I_D = 250 µA
- 1.6
0.02
T_J = 125 °C
0.01
T_J = 25 °C
0.00
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
160
120
- 1.9
80
- 2.2
40
- 2.5
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
100 _{Limited by RDS(on)*}
100 µs
10
1 ms
10 ms
1
100 ms
1s
10 s
0.1
DC
T_A = 25 °C
Single Pulse
0.01
BVDSS
Limited
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 65670
S10-0112-Rev. A, 18-Jan-10